Stack of two III-nitride laser diodes interconnected by a tunnel junction

被引：26

作者：

Siekacz, M. ^{[1
]}

Muziol, G. ^{[1
]}

Hajdel, M. ^{[1
]}

Zak, M. ^{[1
]}

Nowakowski-Szkudlarek, K. ^{[1
]}

Turski, H. ^{[1
]}

Sawicka, M. ^{[1
]}

Wolny, P. ^{[1
]}

Feduniewicz-Zmuda, A. ^{[1
]}

Stanczyk, S. ^{[1
]}

Moneta, J. ^{[1
]}

Skierbiszewski, C. ^{[1
,2
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 04期

关键词：

HYDROGEN;

D O I：

10.1364/OE.27.005784

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a stack of two III-nitride laser diodes (LDs) interconnected by a tunnel junction grown by plasma-assisted molecular beam epitaxy. Hydrogen-free growth is used to obtain as-grown p-type conductivity essential for buried tunnel junctions (TJ). We show the impact of the design of tunnel junction. In particular. we show that, apart from the beneficial piezoelectric polarization inside the Ti. heavy doping reduces the differential resistivity even further. The device starts to lase at a wavelength of 459 nm with a slope efficiency (SE) of 0.7 W/A followed by lasing at 456 nm from the second active region doubling the total SE to 1.4 W/A. This demonstration opens new possibilities for the fabrication of stacks of ultraviolet and visible high power pulsed III-nitride LD. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：5784 / 5791

页数：8

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