Performance Analysis of Nitride-Based Tunnel-Injection Transistor Laser

Ternary alloy InGaN made of III-V nitrides has attracted significant attention from many researchers in recent years due to its tunable energy band gap from far infra-red (0.7 eV) to deep ultra-violet (3.4 eV) parts of the electromagnetic spectrum. This material offers the band lineup, which is one of the most important parameters ensuring the better carrier confinement along the quantum wells (QWs). In this work, we design a strained multiple quantum well (MQW)-based tunnel-injection transistor laser (TI-TL) using InGaN (emitter)/GaN (base)/InGaN (collector) grown on a GaN virtual substrate, followed by an investigation of the optimized optical performance of the designed device with the use of strained QWs. The estimated values of modulation bandwidth are compared with already existing theoretical and experimental values of InGaAs-GaAs TL. Higher optical modulation bandwidth ∼66.06 GHz and lower base threshold current ∼1.67 mA, using strained InxGa1−xN QWs, are obtained for the proposed structure, which makes it a potential candidate for high-speed optical devices employed in high bit-rate optical communication networks.