Dose Effects on CMOS Active Pixel Sensors

被引：0

作者：

Dhombres, S. ^{[1
,2
]}

Michez, A. ^{[1
]}

Boch, J. ^{[1
]}

Beauvivre, S. ^{[2
]}

Vaille, J-R. ^{[1
]}

Touboul, A. D. ^{[1
]}

Adell, P. C. ^{[3
]}

Bezerra, F. ^{[4
]}

Lorfevre, E. ^{[4
]}

Kraehenbuehl, D. ^{[2
]}

Saigne, F. ^{[1
]}

机构：

[1] Univ Montpellier, IES, CNRS, UMR UM2, 5214 Pl E Bataillon, F-34095 Montpellier 5, France

[2] Systheia, F-34000 Montpellier, France

[3] Jet Prop Lab, Pasadena, CA USA

[4] Ctr Natl Etud Spatiales, F-31401 Toulouse, France

来源：

2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2015年

关键词：

CMOS image sensor; thermal annealing; isochronal annealing; extending lifetime; ionizing radiation; total ionizing dose (TID);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thermal annealing approach is applied on irradiated CMOS active pixel sensors to investigate total dose effects and improve device lifetime. Results are discussed and help identified the sensor's sensitive areas.

引用

页数：3

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