Radiation effects in a CMOS active pixel sensor

被引：91
|
作者：
Hopkinson, GR [1 ]
机构：
[1] Sira Electroopt Ltd, Chislehurst BR7 5EH, Kent, England
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期
关键词：
D O I：
10.1109/23.903796
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A CMOS active pixel sensor has been evaluated with Co60, 10 MeV proton and heavy-ion irradiation. Permanent displacement damage effects were seen but total ionizing dose-induced dark current and increase in power supply current annealed at 100 degrees C, Large changes in responsivity were seen after proton irradiation, which subsequently annealed. Mechanisms for these responsivity changes are discussed, but a definitive cause has not Set been established.
引用
收藏
页码：2480 / 2484
页数：5
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