Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers

被引：0

作者：

Duan, J. ^{[1
]}

Dong, B. ^{[1
]}

Huang, H. ^{[1
]}

Lu, Z. G. ^{[2
]}

Poole, P. J. ^{[2
]}

Grillot, F. ^{[1
,3
]}

机构：

[1] Telecom ParisTech, LTCI, 46 Rue Barrault, F-75013 Paris, France

[2] NRC Canada, Adv Elect & Photon Res Ctr, Ottawa, ON K1A 0R6, Canada

[3] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年

关键词：

Quantum dots; Distributed feedback lasers; spectral linewidth; rebroadening;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper experimentally investigates the thermal dependence of the emission linewidth of 1.52-mu m single mode InAs/InP quantum dot lasers. Using a distributed feedback cavity made with symmetric antireflection coatings, a minimum linewidth of 300 kHz is unveiled. This narrow line is found rather constant with the injection current and the temperature range (293 K - 313 K). However, under certain operating conditions, a linewidth rebroadening is also observed, which may be attributed to the spectral hole burning and to the variations of the alpha factor with the temperature and bias current. Nevertheless, these results confirm the potential of this technology for manufacturing low-phase noise oscillators for coherent optical communications.

引用

页数：2

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