Influence of the relaxation state on the crystallization kinetics of Sb-rich SbGe amorphous films

The influence of the stress relaxation state on the crystallization process has been studied in amorphous Sb0.87Ge0.13 films. Relaxed amorphous areas produced by laser irradiation have been crystallized by isothermal annealing during in situ observation in a transmission electron microscope. The results show that the relaxed material crystallizes at a lower temperature than the as-grown material, and has a higher crystal growth velocity and a lower activation energy for crystal growth. The differences in the crystallization kinetics are in the nucleation process rather than in the growth process.