Influence of the relaxation state on the crystallization kinetics of Sb-rich SbGe amorphous films

被引：9
|
作者：
Morilla, MC [1 ]
Afonso, CN [1 ]
PetfordLong, AK [1 ]
Doole, RC [1 ]
机构：
[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1996年 / 73卷 / 04期
关键词：
D O I：
10.1080/01418619608243717
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of the stress relaxation state on the crystallization process has been studied in amorphous Sb0.87Ge0.13 films. Relaxed amorphous areas produced by laser irradiation have been crystallized by isothermal annealing during in situ observation in a transmission electron microscope. The results show that the relaxed material crystallizes at a lower temperature than the as-grown material, and has a higher crystal growth velocity and a lower activation energy for crystal growth. The differences in the crystallization kinetics are in the nucleation process rather than in the growth process.
引用
收藏
页码：1237 / 1247
页数：11
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