Preparation and photovoltaic properties of Ag2O/Si isotype heterojunction

被引：42
|
作者：
Ismail, RA [1 ]
Yahya, KZ
Abdulrazaq, OA
机构：
[1] Minist Sci & Technol, Appl Phys Ctr, Baghdad, Iraq
[2] Univ Technol Baghdad, Sch Appl Sci, Baghdad, Iraq
[3] NASSR State Co, Minist Ind & Minerals, Baghdad, Iraq
来源：
SURFACE REVIEW AND LETTERS | 2005年 / 12卷 / 02期
关键词：
Ag2O/Si; heterojunction; rapid thermal oxidation; photovoltaic;
D O I：
10.1142/S0218625X05007074
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Highly (101)-oriented p-Ag2O thin film with high electrical resistivity was grown by rapid thermal oxidation (RTO) on clean monocrystalline p-type Si without any post-deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.46eV. The electrical and photovoltaic properties of Ag2O/Si isotype heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponce result revealed that there are two peaks located at 750 nm and 900 nm.
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收藏
页码：299 / 303
页数：5
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