Dependence of photovoltaic properties of CdS/Si isotype heterojunction solar cells on deposition temperature

In this paper, we present the dependence of some photovoltaic characteristics (V-infinity, I-SC, eta(m), tau(c), FF and R-lambda) on deposition temperature (300-500 degrees C) for isotype n-CdS/n-Si heterojunction solar cell made by chemical spray pyrolysis (CSP) technique. Optimum photovoltaic results (V infinity = 465 mV, J(SC) = 42 mA/cm(2), FF = 0.32, and eta m = 6.4%) at AM1 condition were obtained for T-S = 450 degrees C without using any of post-deposition annealing and frontal grid contacts. Deterioration in parameters has been observed for Ts > 450 degrees C. Spectral responsivity results were strongly depended on deposition temperature. Stability characteristics of theses cells have been investigated.