Highly (101)-oriented p-Ag2O thin film with high electrical resistivity was grown by rapid thermal oxidation (RTO) on clean monocrystalline p-type Si without any post-deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.46eV. The electrical and photovoltaic properties of Ag2O/Si isotype heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponce result revealed that there are two peaks located at 750 nm and 900 nm.
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Sun Moon Univ, Dept Elect Informat Commun Engn, Chung Nam 336840, South KoreaSun Moon Univ, Dept Elect Informat Commun Engn, Chung Nam 336840, South Korea
Lee, SH
Kim, HC
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Sun Moon Univ, Dept Elect Informat Commun Engn, Chung Nam 336840, South KoreaSun Moon Univ, Dept Elect Informat Commun Engn, Chung Nam 336840, South Korea
机构:
College of Chemical Engineering, Sichuan University of Science and Engineering, Zigong,643000, ChinaCollege of Chemical Engineering, Sichuan University of Science and Engineering, Zigong,643000, China
Li, Minjiao
Wang, Yaqin
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College of Chemical Engineering, Sichuan University of Science and Engineering, Zigong,643000, ChinaCollege of Chemical Engineering, Sichuan University of Science and Engineering, Zigong,643000, China
Wang, Yaqin
Xing, Yanqing
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College of Chemical Engineering, Sichuan University of Science and Engineering, Zigong,643000, ChinaCollege of Chemical Engineering, Sichuan University of Science and Engineering, Zigong,643000, China
Xing, Yanqing
Zhong, Junbo
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College of Chemical Engineering, Sichuan University of Science and Engineering, Zigong,643000, ChinaCollege of Chemical Engineering, Sichuan University of Science and Engineering, Zigong,643000, China