The effect of different plasma Pre-treatments of chemical vapor deposited (CVD) tungsten nitride (W2N) surfaces on the dewetting behavior of subsequently grown CVD Cu films was investigated by annealing the resulting film stacks in high purity argon. It was found that a hydrogen plasma pre-treatment significantly improved the resistance to Cu dewetting from the W2N surfaces while ammonia and nitrogen plasma pretreatment slightly accelerated the dewetting process. The proposed mechanisms and ramifications of these findings were discussed.
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Laboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of TechnologyLaboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of Technology
李小松
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赵天亮
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常大磊
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刘倩倩
朱爱民
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Laboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of TechnologyLaboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of Technology