Order-driven contribution to the planar Hall effect in Fe3Si thin films -: art. no. 172401

被引：35
|
作者：
Bowen, M [1 ]
Friedland, KJ [1 ]
Herfort, J [1 ]
Schönherr, HP [1 ]
Ploog, KH [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PHYSICAL REVIEW B | 2005年 / 71卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.71.172401
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on an intrinsic origin to the planar Hall effect through experiments on the Hensler alloy Fe(3+x)Sil(1-x) in the range -0.08 <= x <= 0.06. Both structural ordering around exact Fe3Si stoichiometry and thermally regulated magnetic ordering of interpenetrating fcc Fe sublattices drive the planar Hall effect from a conventional to an ordered intrinsic magnetotransport regime. The transition is marked by a change in sign of p(xy) but not of Delta(rho xx). A microscopic model which extends anisotropic magnetoresi stance theory correctly describes this regime.
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页数：4
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