Magnetic properties of Fe3Si/GaAs(001) hybrid structures -: art. no. 144411

The magnetic properties of two epitaxial Fe3Si/GaAs(001) hybrid structures are studied using ferromagnetic resonance. The results from the angular dependence of the excited uniform mode enable a precise determination of the magnetic anisotropy fields in this ferromagnet/semiconductor hybrid structure. The samples differ in their Si content (one stoichiometric sample with 25.5% and one Fe-rich with 16.5% Si). Moderate effective magnetizations of 4 pi M-eff=10.1 kG and 13.5 kG, respectively, were found. In addition, depending on the Si content in the Heusler-like alloy, a small but pronounced uniaxial in-plane anisotropy field of 2K(2 parallel to)/M=-6 to -32 Oe with the easy axis rotated by 45 degrees with respect to the easy axis of the larger fourfold anisotropy exists.