Room-temperature dephasing time of intersubband transitions in heavily-doped InGaAs/AlAs/AlAsSb coupled quantum wells

被引：4
|
作者：
Gopal, AV [1 ]
Yoshida, H [1 ]
Simoyama, T [1 ]
Kasai, J [1 ]
Mozume, T [1 ]
Ishikawa, H [1 ]
机构：
[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 09期
关键词：
D O I：
10.1063/1.1606500
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room-temperature dephasing time (T-2) estimates of 1.55 mum intersubband transitions (ISBT) are presented in InGaAs/AlAs/AlAsSb coupled double quantum wells. In this material, optimized for ISBT at communication wavelengths for all-optic switching application, we also studied the doping-density dependence of the four-wave-mixing decay time as a function of incident excitation intensity. A T-2 value of about 292+/-40 fs is estimated at an intensity corresponding to the saturation intensity in samples that are doped to 2x10(19) cm(-3). This value is in good agreement with the value estimated from earlier calculations. (C) 2003 American Institute of Physics.
引用
收藏
页码：1854 / 1856
页数：3
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