A carbide/Ni/Ni-silicide layer structure formed by focused electron beam heating and contamination with carbon

We demonstrate that a carbide/Ni/Ni-silicide sandwich structure can be formed on a silicon surface using focused electron-beam heating. Auger electron spectroscopy depth profile analyses show that the thickness of the carbide layer is about 3 nm and that a Ni silicide is produced between the Ni and the silicon substrate. Since the temperature caused by focused electron-beam heating is not high enough to transform a whole layer of Ni into Ni silicide, part of the Ni remains between the carbide and silicide layers. The carbide layer which is induced in the electron-beam system contributes to protecting the pattern of Ni film during the etching process.