Growth and electrical properties of PbTe bulk crystals grown by the Bridgman method under controlled tellurium or lead vapor pressure

被引：14
|
作者：
Nugraha
Suto, K
Itoh, O
Nishizawa, J
Yokota, Y
机构：
[1] TOHOKU UNIV,SENDAI,MIYAGI 980,JAPAN
[2] TOHOKU UNIV,FAC ENGN,DEPT MAT SCI,SENDAI,MIYAGI 980,JAPAN
[3] SEMICOND RES INST,SENDAI,MIYAGI 980,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 165卷 / 04期
关键词：
D O I：
10.1016/0022-0248(96)00220-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
PbTe bulk crystals have been grown by the Bridgman method under controlled tellurium or lead vapor pressure. Both p-type crystals, and n-type crystals which have been difficult to grow by the conventional Bridgman method can be grown by this method. For P-Te = 10.6 and 3.03 Torr, the grown crystals are p-type. For P-Te = 1.34 and 0.86 Torr, large portions of grown crystals are n-type. For P-Te = 0.26 Torr and lead vapor pressures of P-Pb = 4.92 x 10(-7) and 8.4 x 10(-5) Torr, grown crystals are n-type. Average pit sizes of p-type crystals are larger than those of n-type crystals, but etch pit densities of p-type crystals are lower than those of n-type.
引用
收藏
页码：402 / 407
页数：6
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