Growth and electrical properties of PbTe bulk crystals grown by the Bridgman method under controlled tellurium or lead vapor pressure

PbTe bulk crystals have been grown by the Bridgman method under controlled tellurium or lead vapor pressure. Both p-type crystals, and n-type crystals which have been difficult to grow by the conventional Bridgman method can be grown by this method. For P-Te = 10.6 and 3.03 Torr, the grown crystals are p-type. For P-Te = 1.34 and 0.86 Torr, large portions of grown crystals are n-type. For P-Te = 0.26 Torr and lead vapor pressures of P-Pb = 4.92 x 10(-7) and 8.4 x 10(-5) Torr, grown crystals are n-type. Average pit sizes of p-type crystals are larger than those of n-type crystals, but etch pit densities of p-type crystals are lower than those of n-type.