Possibility of realizing quantum spin Hall effect at room temperature in stanene/Al2O3(0001)

被引:38
|
作者
Wang, Hui [1 ,2 ,3 ]
Pi, S. T. [1 ]
Kim, J. [1 ]
Wang, Z. [2 ,3 ]
Fu, H. H. [1 ]
Wu, R. Q. [1 ,2 ,3 ]
机构
[1] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA
[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[3] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
关键词
EPITAXIAL-GROWTH; TRANSITION; INSULATOR;
D O I
10.1103/PhysRevB.94.035112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional quantum spin Hall (QSH) insulators with reasonably wide band gaps are imperative for the development of various innovative technologies. Through systematic density functional calculations and tight-binding simulations, we found that stanene on an alpha-alumina surface may possess a sizeable topologically nontrivial band gap (similar to 0.25 eV) at the Gamma point. Furthermore, stanene is atomically bonded to but electronically decoupled from the substrate, providing high structural stability and isolated QSH states to a large extent. The underlying physical mechanism is rather general, and this finding may lead to the opening of a new vista for the exploration of QSH insulators for room temperature device applications.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Stanene on a SiC(0001) surface: a candidate for realizing quantum anomalous Hall effect
    Li, Ping
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2019, 21 (21) : 11150 - 11157
  • [2] Room temperature quantum spin Hall insulator: Functionalized stanene on layered PbI2 substrate
    Zhang, Huisheng
    Wang, Zhe
    Xu, Xiaohong
    [J]. APPLIED PHYSICS LETTERS, 2017, 111 (07)
  • [3] Epitaxial binding and strain effects of monolayer stanene on the Al2O3(0001) surface
    Eltinge, Stephen
    Ismail-Beigi, Sohrab
    [J]. PHYSICAL REVIEW MATERIALS, 2022, 6 (01)
  • [4] Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films
    Run-wu Zhang
    Chang-wen Zhang
    Wei-xiao Ji
    Sheng-shi Li
    Shi-shen Yan
    Shu-jun Hu
    Ping Li
    Pei-ji Wang
    Feng Li
    [J]. Scientific Reports, 6
  • [5] Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films
    Zhang, Run-wu
    Zhang, Chang-wen
    Ji, Wei-xiao
    Li, Sheng-shi
    Yan, Shi-shen
    Hu, Shu-jun
    Li, Ping
    Wang, Pei-ji
    Li, Feng
    [J]. SCIENTIFIC REPORTS, 2016, 6
  • [6] Hydroxylated α-Al2O3 (0001) surfaces and metal/α-Al2O3 (0001) interfaces
    Fu, Qiang
    Wagner, Thomas
    Ruehle, Manfred
    [J]. SURFACE SCIENCE, 2006, 600 (21) : 4870 - 4877
  • [7] Buffer-facilitated epitaxial growth of AlN on Al2O3(0001) at room temperature
    Lin, YR
    Wu, ST
    [J]. SURFACE SCIENCE, 2002, 516 (03) : L535 - L539
  • [8] Room-temperature synthesis of χ-Al2O3 and ruby (α-Cr:Al2O3)
    Cortes-Vega, Fernando D.
    Yang, Wenli
    Zarate-Medina, J.
    Brankovic, Stanko R.
    Herrera Ramirez, Jose M.
    Hernandez, Francisco C. Robles
    [J]. CRYSTENGCOMM, 2018, 20 (25): : 3505 - 3511
  • [9] Optical Properties of Stanene-like Nanosheets on Al2O3(0001): Implications for Xene Photonics
    Grazianetti, Carlo
    Bonaventura, Eleonora
    Martella, Christian
    Molle, Alessandro
    Lupi, Stefano
    [J]. ACS APPLIED NANO MATERIALS, 2021, 4 (03) : 2351 - 2356
  • [10] Dual-layer structure of Ti on Al2O3(0001) grown epitaxially at room temperature
    Chen, WC
    Lin, YR
    Guo, XJ
    Wu, ST
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (4A): : L381 - L383