Dual-layer structure of Ti on Al2O3(0001) grown epitaxially at room temperature

被引：0
|
作者：
Chen, WC [1 ]
Lin, YR
Guo, XJ
Wu, ST
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan
[2] Natl Tsing Hua Univ, Dept Chem, Hsinchu 30043, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 4A期
关键词：
epitaxy; titanium; sapphire; magnetron sputtering; pole figure;
D O I：
10.1143/JJAP.42.L381
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The epitaxial growth of titanium on Al2O3(0 0 0 1) was achieved using magnetron sputtering with no substrate heating. The heating power supply was turned off during sputtering. The titanium layer was composed of two layers: Ti(1 0 -1 0)/Ti(0 0 0 1)/Al2O3(0 0 0 1). Both X-ray and electron diffraction were applied to establish the epitaxial relationship: Ti(1 0 -1 0) parallel to Ti(0 0 0 1) parallel to Al2O3(0 0 0 1) Ti[0 0 0 1] parallel to Ti[1 0 -1 0] parallel to Al2O3[1 1 -2 0].
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页码：L381 / L383
页数：3
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