Stanene, a cousin of graphene, has pz-orbital Dirac states, owing to its hexagonal symmetry. Nevertheless, stanene has to be obtained through growing on substrates with strong interfacial interactions, which generally damages their intrinsic p(pz)-orbital Dirac states. Fortunately, we find that the quadratic topological states are derived from the px, y orbitals rather than pz orbitals in stanene on 4H-SiC(0001), which survive even the strong interfacial interactions. We also find that the spin-orbital coupling simultaneously with the exchange field gives rise to an observable band gap of 22.97 meV. Berry curvature and edge state calculations further demonstrate the nontrivial topological phase of such quadratic topological states with a Chern number C = 2, showing its potential to realize quantum anomalous Hall effect at near room temperature. Finally, we construct a simple effective model to reveal the low-energy physics in this system. It is hoped this finding will be applicable to other twodimensional materials, which should be useful for future investigations.
机构:
Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Computat Phys Sci MOE, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
Shanxi Normal Univ, Coll Phys & Elect Informat, Linfen 041004, Peoples R ChinaFudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Zhang, Huisheng
Zhou, Tong
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Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Computat Phys Sci MOE, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R ChinaFudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Zhou, Tong
Zhang, Jiayong
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Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Computat Phys Sci MOE, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R ChinaFudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Zhang, Jiayong
Zhao, Bao
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Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Computat Phys Sci MOE, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R ChinaFudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Zhao, Bao
Yao, Yugui
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Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R ChinaFudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Yao, Yugui
Yang, Zhongqin
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Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Computat Phys Sci MOE, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
Fudan Univ, Collaborat Innovat Ctr Adv Microstruct, Shanghai 200433, Peoples R ChinaFudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Shen, T.
Gu, J. J.
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Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Gu, J. J.
Xu, M.
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Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Xu, M.
Wu, Y. Q.
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Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Wu, Y. Q.
Bolen, M. L.
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Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Bolen, M. L.
Capano, M. A.
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Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Capano, M. A.
Engel, L. W.
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Natl High Magnet Field Lab, Tallahassee, FL 32310 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Engel, L. W.
Ye, P. D.
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Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA