Too Noisy at the Bottom? -Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

被引：0
|
作者：
Wang, Runsheng [1 ]
Guo, Shaofeng [1 ]
Zhang, Zhe [1 ]
Wang, Qingxue [2 ]
Wu, Dehuang [2 ]
Wang, Joddy [2 ]
Huang, Ru [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Synopsys Inc, Mountain View, CA 94043 USA
来源：
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年
关键词：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the recent advances of our studies on RTN are presented from device, circuit, and EDA perspectives. RTN characteristics in FinFETs are investigated and compared with planar devices. The AC RTN effect is discussed for understanding RTN impacts in practical circuit applications. Then, a new and efficient circuit simulation platform for RTN is presented for the first time, which has been implemented in HSPICE using OMI/TMI. In addition, some open questions related to RTN are discussed with outlooks.
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页数：4
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