UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate

被引:0
|
作者
Zhang, Yiyun [1 ]
Li, Hongjian [2 ]
Liu, Lining [1 ]
Li, Panpan [3 ]
Wang, Liancheng [4 ]
Yi, Xiaoyan [3 ,5 ]
Wang, Guohong [3 ,5 ]
机构
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA
[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
[3] Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China
[4] Cent S Univ, Coll Mech & Elect Engn, State Key Lab High Performance Complex Mfg, Changsha, Hunan, Peoples R China
[5] Univ Chinese Acad Sci, Beijing, Peoples R China
基金
国家重点研发计划;
关键词
microdisk cavities; whispering-gallery modes; deep-ultraviolet emission; EMISSION; LASERS; NM;
D O I
10.1117/1.JNP.12.043502
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have successfully fabricated 7-mu m 155-nm-thick undercut microdisk cavities with AlN/Al-0.60 Ga0.40N (5.5 nm/2.5 nm) multiple quantum wells epitaxially grown on Si substrate by metal-organic chemical vapor deposition. Upon optical pumping, whispering-gallery modes (WGMs) with wavelengths around similar to 250 nm can be observed throughout the photoluminescence spectrum at room temperature, with quality factors around 500 to 1000. These cavity modes have been analyzed by theoretical calculations. Our results suggest great potentials to demonstrate WGM lasing in the UVC range from these AlGaN/AlN-on-Si microdisk cavities monolithically grown on a Si platform. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数:8
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