UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate

被引:0
|
作者
Zhang, Yiyun [1 ]
Li, Hongjian [2 ]
Liu, Lining [1 ]
Li, Panpan [3 ]
Wang, Liancheng [4 ]
Yi, Xiaoyan [3 ,5 ]
Wang, Guohong [3 ,5 ]
机构
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA
[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
[3] Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China
[4] Cent S Univ, Coll Mech & Elect Engn, State Key Lab High Performance Complex Mfg, Changsha, Hunan, Peoples R China
[5] Univ Chinese Acad Sci, Beijing, Peoples R China
基金
国家重点研发计划;
关键词
microdisk cavities; whispering-gallery modes; deep-ultraviolet emission; EMISSION; LASERS; NM;
D O I
10.1117/1.JNP.12.043502
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have successfully fabricated 7-mu m 155-nm-thick undercut microdisk cavities with AlN/Al-0.60 Ga0.40N (5.5 nm/2.5 nm) multiple quantum wells epitaxially grown on Si substrate by metal-organic chemical vapor deposition. Upon optical pumping, whispering-gallery modes (WGMs) with wavelengths around similar to 250 nm can be observed throughout the photoluminescence spectrum at room temperature, with quality factors around 500 to 1000. These cavity modes have been analyzed by theoretical calculations. Our results suggest great potentials to demonstrate WGM lasing in the UVC range from these AlGaN/AlN-on-Si microdisk cavities monolithically grown on a Si platform. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
收藏
页数:8
相关论文
共 50 条
  • [21] Observation of Whispering Gallery Modes in InGaN/GaN Multi-Quantum Well Microdisks with Ag Plasmonic Nanoparticles on Si Pedestals
    Kang Jea Lee
    Duc Anh Dinh
    Huynh Tran My Hoa
    Pham Hoai Phuong
    Hoang Hung Nguyen
    Kwan San Hui
    Kwun Nam Hui
    Tran Viet Cuong
    Journal of Electronic Materials, 2022, 51 : 2054 - 2061
  • [22] Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells
    Yamada, Yoichi
    Murotani, Hideaki
    Maeda, Noritoshi
    Khan, M. Ajmal
    Jo, Masafumi
    Hirayama, Hideki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (12)
  • [23] Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters
    Xu, Houqiang
    Jiang, Jie'an
    Dai, Yijun
    Cui, Mei
    Li, Kuang-hui
    Ge, Xiaotian
    Hoo, Jason
    Yan, Long
    Guo, Shiping
    Ning, Jiqiang
    Sun, Haiding
    Sarkar, Biplab
    Guo, Wei
    Ye, Jichun
    ACS APPLIED NANO MATERIALS, 2020, 3 (06) : 5335 - 5342
  • [24] Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization
    Jacopin, Gwenole
    Frankerl, Christian
    Tillner, Nadine
    Davies, Matthew John
    Rossbach, Georg
    Brandl, Christian
    Hoffmann, Marc Patrick
    Zeisel, Roland
    Hoffmann, Axel
    Lugauer, Hans-Juergen
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2021, 258 (04):
  • [25] Enhanced Pockels Effect in AlN Mirroring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells
    Shin, Walter J.
    Wang, Ping
    Sun, Yi
    Paul, Sritoma
    Liu, Jiangnan
    Kira, Mackillo
    Soltani, Moe
    Mi, Zetian
    ACS PHOTONICS, 2022, 10 (01) : 34 - 42
  • [26] AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
    Henry, A.
    Lundskog, A.
    Palisaitis, J.
    Ivanov, I. G.
    Kakanakova-Georgieva, A.
    Forsberg, U.
    Persson, P. O. A.
    Janzen, E.
    EUROCVD 17 / CVD 17, 2009, 25 (08): : 837 - 844
  • [27] Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
    Piva, F.
    Buffolo, M.
    De Santi, C.
    Pilati, M.
    Roccato, N.
    Muhin, A.
    Susilo, N.
    Vidal, D. Hauer
    Sulmoni, L.
    Wernicke, T.
    Kneissl, M.
    Meneghesso, G.
    Zanoni, E.
    Meneghini, M.
    GALLIUM NITRIDE MATERIALS AND DEVICES XVIII, 2023, 12421
  • [28] Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors
    Wang, Ying-Zhe
    Zheng, Xue-Feng
    Zhu, Jia-Duo
    Xu, Lin-Lin
    Xu, Sheng-Rui
    Liang, Ren-Li
    Dai, Jiang-Nan
    Li, Pei-Xian
    Zhou, Xiao-Wei
    Mao, Wei
    Zhang, Jin-Cheng
    Ma, Xiao-Hua
    Hao, Yue
    APPLIED PHYSICS LETTERS, 2020, 116 (20)
  • [29] High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate
    Zhao, Jianguo
    Zhang, Xiong
    He, Jiaqi
    Chen, Shuai
    Wu, Zili
    Fan, Aijie
    Dai, Qian
    Feng, Zhe Chuan
    Cui, Yiping
    ACS PHOTONICS, 2018, 5 (05): : 1903 - 1906
  • [30] Facet Formation of AlGaN/AlN-based Multiple Quantum Wells by Laser Scribing
    Xue, Bin
    Yan, Jianchang
    Guo, Yanan
    Liu, Chunyan
    Zeng, Yiping
    Wang, Junxi
    Li, Jinmin
    2019 16TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2019 INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2019, : 74 - 76