Phonon density of states of bulk gallium nitride

被引：91
|
作者：
Nipko, JC
Loong, CK
Balkas, CM
Davis, RF
机构：
[1] Argonne Natl Lab, Div Intense Pulsed Neutron Source, Argonne, IL 60439 USA
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 01期
关键词：
D O I：
10.1063/1.121714
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the measured phonon density of states of a bulk GaN powder by time-of-Right neutron spectroscopy. The observed one-phonon excitation spectrum consists of two broad bands centered at about 23 and 39 meV corresponding to the acoustic and the first group of optical phonons; two sharp bands of upper optic modes at about 75 and 86 meV; and a gap of 45-65 meV. The phonon dispersion curves, lattice specific heat, and Debye temperature are calculated from fitting the data with a rigid-ion model. (C) 1998 American Institute of Physics.
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页码：34 / 36
页数：3
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