Phonon generation by femtosecond pulsed laser excitation of an aluminium nitride/gallium nitride superlattice

被引:1
|
作者
Stanton, NM [1 ]
Martinez, CE [1 ]
Kent, AJ [1 ]
Novikov, SV [1 ]
Foxon, CT [1 ]
机构
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
关键词
D O I
10.1002/pssc.200405352
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have used bolometric detection techniques to study the phonons; generated by ultrafast optical excitation of a gallium nitride/aluminium nitride superlattice (SL) structure. For excitation wavelengths shorter than 435 nm, we observe a strong longitudinal acoustic phonon signal. Angular dependence measurements show that this signal enhancement becomes channelled closer to the SL growth direction for excitation wavelengths shorter than the peak photoluminescence wavelength. The results are consistent with similar measurements using GaAs/AlAs SL's, where ultrafast optical excitation resulted in the generation of monochromatic phonons when the structure was resonantly excited.
引用
收藏
页码:2678 / 2681
页数:4
相关论文
共 50 条
  • [1] Generation of terahertz monochromatic acoustic phonon pulses by femtosecond optical excitation of a gallium nitride/aluminium nitride superlattice
    Martinez, CE
    Stanton, NM
    Walker, PM
    Kent, AJ
    Novikov, SV
    Foxon, CT
    APPLIED PHYSICS LETTERS, 2005, 86 (22) : 1 - 3
  • [2] Femtosecond laser machining of gallium nitride
    Kim, T
    Kim, HS
    Hetterich, M
    Jones, D
    Girkin, JM
    Bente, E
    Dawson, MD
    LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 565 - 566
  • [3] Femtosecond laser machining of gallium nitride
    Kim, T
    Kim, HS
    Hetterich, M
    Jones, D
    Girkin, JM
    Bente, E
    Dawson, MD
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 262 - 264
  • [4] Pulsed laser deposition of aluminum nitride and gallium nitride thin
    Sudhir, GS
    Fujii, H
    Wong, WS
    Kisielowski, C
    Newman, N
    Dieker, C
    Liliental-Weber, Z
    Rubin, MD
    Weber, ER
    APPLIED SURFACE SCIENCE, 1998, 127 : 471 - 476
  • [5] Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice
    Peres, M.
    Neves, A. J.
    Monteiro, T.
    Magalhaes, S.
    Franco, N.
    Lorenz, K.
    Alves, E.
    Damilano, B.
    Massies, J.
    Dussaigne, A.
    Grandjean, N.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (04) : 2473 - 2478
  • [6] Femtosecond switching of electron and phonon streams in gallium nitride crystals
    Brazis, R.
    Raguotis, R.
    ICTON 2006: 8TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS: ESPC, NAON, 2006, : 203 - +
  • [7] Pulsed laser deposition of aluminum nitride and gallium nitride thin films
    Sudhir, G.S.
    Fujii, H.
    Wong, W.S.
    Kisielowski, C.
    Newman, N.
    Dieker, C.
    Liliental-Weber, Z.
    Rubin, M.D.
    Weber, E.R.
    Applied Surface Science, 1998, 127-129 : 471 - 476
  • [8] Pulsed laser deposition of gallium nitride on sapphire
    Talyansky, V
    Vispute, RD
    Sharma, RP
    Choopun, S
    Downes, MJ
    Venkatesan, T
    Li, YX
    SalamancaRiba, LG
    Wood, MC
    Lareau, RT
    Jones, KA
    GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 99 - 104
  • [9] Phonon dispersion in gallium nitride
    Demangeot, F
    Frandon, J
    Renucci, MA
    Beaumont, B
    Gibart, P
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 97 - 100
  • [10] Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition
    Wang, LD
    Kwok, HS
    APPLIED SURFACE SCIENCE, 2000, 154 : 439 - 443