Binding energy of biexcitons in two-dimensional semiconductors

被引：13
|
作者：
Liu, JJ [1 ]
Kong, XJ
Wei, CW
Li, SS
机构：
[1] Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 1998年 / 15卷 / 08期
关键词：
D O I：
10.1088/0256-307X/15/8/016
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The binding energies of a two-dimensional (2D) biexciton have been calculated variationally for all values of the effective electron-to-hole mass ratio a by using a three-parameter wave function. The ratio of the binding energy of a 2D biexciton to that of a 2D exciton is found to be from 0.582 to 0.220. The results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.
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收藏
页码：588 / 590
页数：3
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