Exciton binding energy and screening length in two-dimensional semiconductors

被引:9
|
作者
Hieu T Nguyen-Truong [1 ,2 ]
机构
[1] Van Lang Univ, Sci & Technol Adv Inst, Lab Appl Phys, Ho Chi Minh City, Vietnam
[2] Van Lang Univ, Fac Technol, Ho Chi Minh City, Vietnam
关键词
HYDROGEN-ATOM; MONOLAYER; POTENTIALS; STATES;
D O I
10.1103/PhysRevB.105.L201407
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We approximately solve the Schr??dinger equation for two-dimensional Wannier-Mott excitons in the effectivemass approximation and derive an expression for the exciton energy levels, hence the exciton binding energy. The electron-hole interaction is described by the Rytova-Keldysh potential in a logarithmic approximation. From the derived expression, we introduce approximate expressions to experimentally determine the exciton binding energy (along with the quasiparticle band gap), the screening length, and the exciton reduced mass from measured exciton transition energies of the ground state (1s), and the first (2s) and the second (3s) excited states. Our results agree well with experimental data and theoretical calculations.
引用
收藏
页数:5
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