Measuring and calculating the hall mobility of semiconductor epitaxial layers by a contactless method

被引:0
|
作者
Wang, ZX [1 ]
Chu, YL [1 ]
机构
[1] FUDAN UNIV,DEPT PHYS,SHANGHAI 200433,PEOPLES R CHINA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new probe was made from microwave dielectric waveguides. Using this probe, we can measure the magnetoresistance of AlxGa1-xAs, Hg1-xCdxTe and other epitaxial layers easily. It is a contactless and non-destructive method. During the test, we do not need to specially treat the surface and the shape of the samples. The measuring area is about 4 x 4 mm(2). This article also presents a method of calculating the mobility of these samples from the magnetoresistance data for different semiconductor materials. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:1837 / 1843
页数:7
相关论文
共 50 条