Measuring and calculating the hall mobility of semiconductor epitaxial layers by a contactless method

被引:0
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作者
Wang, ZX [1 ]
Chu, YL [1 ]
机构
[1] FUDAN UNIV,DEPT PHYS,SHANGHAI 200433,PEOPLES R CHINA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new probe was made from microwave dielectric waveguides. Using this probe, we can measure the magnetoresistance of AlxGa1-xAs, Hg1-xCdxTe and other epitaxial layers easily. It is a contactless and non-destructive method. During the test, we do not need to specially treat the surface and the shape of the samples. The measuring area is about 4 x 4 mm(2). This article also presents a method of calculating the mobility of these samples from the magnetoresistance data for different semiconductor materials. (C) 1997 Elsevier Science Ltd.
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页码:1837 / 1843
页数:7
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