Electron microscopy study of Ni induced crystallization in amorphous Si thin films

被引：0

作者：

Radnoczi, G. Z. ^{[1
]}

Dodony, E. ^{[1
,2
]}

Battistig, G. ^{[1
]}

Vouroutzis, N. ^{[3
]}

Stoemenos, J.

Frangis, N. ^{[3
]}

Kovacs, A. ^{[4
]}

Pecz, B. ^{[1
]}

机构：

[1] Hungarian Acad Sci, Res Ctr Nat Sci, Inst Tech Phys & Mat Sci, H-1121 Budapest, Hungary

[2] Eotvos Lorand Univ, Doctoral Sch Phys, H-1117 Budapest, Hungary

[3] Aristotle Univ Thessaloniki, Dept Phys, GR-54124 Thessaloniki, Greece

[4] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, Peter Grunberg Inst, D-52425 Julich, Germany

来源：

INTERNATIONAL CONFERENCES AND EXHIBITION ON NANOTECHNOLOGIES & ORGANIC ELECTRONICS (NANOTEXNOLOGY 2014) | 2015年 / 1646卷

关键词：

INDUCED LATERAL CRYSTALLIZATION; METAL-INDUCED CRYSTALLIZATION; SOLID-PHASE CRYSTALLIZATION; SILICON FILMS; NICKEL; TEMPERATURE;

D O I：

10.1063/1.4908579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi2 phase started to form at a temperature as low as 250 degrees C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi2 grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni3Si2. Low temperature experiments show, that long annealing of amorphous silicon at 410 degrees C already results in large crystallized Si regions due to the Ni induced crystallization.

引用

页码：31 / 37

页数：7

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