Study on aluminum-induced crystallization of amorphous silicon thin films at low temperature

被引：0
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作者：
Yang, Sheng [1 ]
Xia, Dong-Lin [1 ]
Xu, Man [1 ]
Zhao, Xiu-Jian [1 ]
机构：
[1] Key Laboratory of Silicate Materials Science and Engineering of Ministry of Education, Wuhan University of Technology, Wuhan 430074, China
来源：
Wuhan Ligong Daxue Xuebao/Journal of Wuhan University of Technology | 2006年 / 28卷 / 06期
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摘要：
Amorphous silicon(a-Si)thin films were deposited on aluminum-coated glass substrate by PECVD and then crystallized by aluminum-induced crystallization(AIC) at 500°C. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. The results indicated the thickness of aluminum was found to play a critical role in crystallinity. The sample of thicker Al layers gave rise to better crystallinity annealed at 500°C for 1 h, while the sample of thinner Al layers remained amorphous structure at the same annealing conditions.
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页码：7 / 9
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