A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors

被引：11

作者：

Keiter, Eric R. ^{[1
]}

Russo, Thomas V. ^{[1
]}

Hembree, Charles E. ^{[1
]}

Kambour, Kenneth E. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

关键词：

Annealing; bipolar junction transistor (BJT); circuit modeling; displacement damage; neutron radiation effects; SILICON DEVICES; IRRADIATED SILICON; RADIATION;

D O I：

10.1109/TNS.2010.2086483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, a bipolar junction transistor (BJT) compact model incorporating displacement damage effects and rapid annealing has been developed. A physics-based approach is used to model displacement damage effects, and this modeling approach is implemented as an augmentation to the Gummel-Poon BJT model. The model is presented and implemented in the Xyce circuit simulator, and is shown to agree well with experiments and TCAD simulation, and is shown to be superior to a previous compact modeling approach.

引用

页码：3305 / 3313

页数：9

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