Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range

被引：8
|
作者：
Solov'ev, V. A. [1 ]
Chernov, M. Yu. [1 ]
Mel'tser, B. Ya. [1 ]
Semenov, A. N. [1 ]
Terent'ev, Ya. V. [1 ]
Firsov, D. D. [2 ]
Komkov, O. S. [2 ]
Ivanov, S. V. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 10期
基金：
俄罗斯科学基金会;
关键词：
D O I：
10.1134/S1063785016100266
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions have been grown for the first time by molecular beam epitaxy on GaAs (001) substrates using a graded InAlAs buffer layer with increasing In composition. The given nanoheterostructures demonstrate an intense photoluminescence at a wavelength of over of over 3 mu m (80 K), which is shifted toward longer wavelengths as compared with that of the structures without InSb insertions.
引用
收藏
页码：1038 / 1040
页数：3
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