共 50 条
- [43] Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface [J]. APL MATERIALS, 2024, 12 (09):
- [45] On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts [J]. Journal of Materials Science: Materials in Electronics, 2016, 27 : 1444 - 1448
- [46] Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (01):