Stress-strain state in α-Ga2O3 epitaxial films on α-Al2O3 substrates

被引：14
|
作者：
Smirnov, Andrei M. [1 ]
Kremleva, Arina V. [1 ]
Sharofidinov, Shukrillo Sh. [1 ,2 ]
Bougrov, Vladislav E. [1 ]
Romanov, Alexey E. [1 ,2 ]
机构：
[1] ITMO Univ, St Petersburg 197101, Russia
[2] Ioffe Inst, St Petersburg 194021, Russia
来源：
APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 07期
基金：
俄罗斯科学基金会;
关键词：
thin film; stress-strain state; alpha-Ga2O3; alpha-Al2O3; heterostructure; hexagonal cell; rhombohedral cell; SAPPHIRE; PHASE;
D O I：
10.35848/1882-0786/ab9657
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We consider the stress-strain state in alpha-Ga2O3/alpha-Al2O3 heterostructures, in which both constituting phases belong to trigonal crystal system. We utilize the hexagonal geometry (hexagonal cell) to account for structural features of the materials and include in the analysis the complete set of six elastic constants C-ij being typical for materials with rhombohedral crystal structure that differs from materials with hexagonal one by the presence of an additional constant C-14. This allows us to derive analytical formulas for elastic strains and mechanical stresses in pseudomorphic alpha-Ga2O3 films on alpha-Al2O3 substrates with various growth orientations assuming nonzero constant C-14.
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