Molecular dynamics calculations of the early stages of thin film formation

被引:0
|
作者
Betz, G [1 ]
Husinsky, W [1 ]
机构
[1] Vienna Tech Univ, Inst Allgemeine Phys, A-1040 Vienna, Austria
关键词
molecular dynamics; thin film deposition; growth mode; ion bombardment; cluster deposition;
D O I
10.1117/12.347412
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
In this contribution we will discuss recent results obtained from Molecular Dynamics (MD) calculations of early stages of thin film deposition for metal atoms and clusters on metal substrates. As a first example we will discuss the deposition of Cu atoms on a Pb single crystal surface. In this case our MD calculations could verify an experimentally observed new growth mode in deposition, which was named subsurface island growth. As a second example we will discuss the possibilities and processes occurring during thin Nm deposition, if instead of atoms clusters (consisting of up to a few hundred atoms) are used. As an example we present the deposition of Al cluster of different size (ranging from 60 atoms up to 1000 atoms per cluster) on a Cu surface.
引用
收藏
页码:148 / 154
页数:7
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