New aspects in n-type doping of SiC with phosphorus

被引：0
|
作者：
Rauls, E.
Gerstmann, U.
Greulich-Weber, S.
Semmelroth, K.
Pensl, G.
Haller, E. E.
机构：
[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus, Denmark
[2] Univ Gesamthsch Paderborn, Dept Phys, Fac Nat Wissensch, D-33098 Paderborn, Germany
[3] Univ Erlangen Nurnberg, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany
[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 | 2006年 / 527-529卷
关键词：
doping; hyperfine interaction; effective-mass theory; density-functional theory;
D O I：
10.4028/www.scientific.net/MSF.527-529.609
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
One problem of doping efficiency by neutron transmutation is given by the low natural abundancy (about 3%) of the Si-30 isotope that gives rise to the transmutation process. In this combined theoretical and experimental work, neutron transmutation of Si-30-enriched 6H-SiC and subsequent high temperature annealing is shown to provide a possibility to achieve efficient n-type doping of volume material with phosphorus yielding free carrier concentrations of 3 center dot 10(18)cm(-3) and Psi donor levels at 70 meV and 85 meV.
引用
收藏
页码：609 / 612
页数：4
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