n-type doping of silicon by proton implantation

被引：0
|
作者：
Klug, Jan N. [1 ]
Lutz, Josef [2 ]
Meijer, Jan B. [1 ]
机构：
[1] Ruhr Univ Bochum, RUBION, Univ Str 150, Bochum, Germany
[2] Tech Univ Chemnitz, Chemnitz, Germany
来源：
PROCEEDINGS OF THE 2011-14TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE 2011) | 2011年
关键词：
Bipolar device; design; particle accelerator; ion implantation; deep levels; IRRADIATION; DONORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ion implantation is one of the most common processes in semiconductor manufacturing. Unfortunately the implantation depth and is limited due to the mass of phosphorous or arsenic. Proton irradiation can go beyond this limit and be utilized to adjust the doping of silicon power devices even in a high depth. The creation of donors is studied for high energy, high dose proton irradiation (2 MeV, fluences 10(14) to 10(16) cm(-2)) in FZ-silicon. The relation between the proton implantation dose and the resulting doping is determined and is compared with previous results. A saturation effect related to the oxygen content is found and an experimental evidence for the incorporation of oxygen in hydrogen-related shallow thermal donors (STD(H)) is given. The resulting profiles are studied with Spreading-Resistance-Profiling and their complex shape is with the help of SRIM calculations [10]. Acceptors and donors are created. The superposition of both profiles explains the experimental results.
引用
收藏
页数：7
相关论文
共 50 条
  • [1] N-type implantation doping of GaN
    Nakano, Y
    Kachi, T
    Jimbo, T
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 515 - 517
  • [2] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION
    DAVIES, DE
    LORENZO, JP
    RYAN, TG
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (07) : 981 - 985
  • [3] N-TYPE DOPING OF INP BY ION-IMPLANTATION
    SUSSMANN, RS
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) : 603 - 617
  • [4] N/Ge co-implantation into GaN for N-type doping
    Nakano, Y
    Kachi, T
    Jimbo, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B): : 2522 - 2527
  • [5] Lifetime control by Fe doping in n-type silicon
    Nishizawa, J
    Sasaki, T
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 273 - 275
  • [6] THE N-TYPE DOPING OF POLYANILINE FILMS BY ION-IMPLANTATION
    WANG, WM
    LIN, SH
    BAO, JG
    RONG, TW
    WAN, HG
    SUN, JH
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (04): : 514 - 518
  • [7] N-type doping of Ge by As implantation and excimer laser annealing
    Milazzo, R.
    Napolitani, E.
    Impellizzeri, G.
    Fisicaro, G.
    Boninelli, S.
    Cuscuna, M.
    De Salvador, D.
    Mastromatteo, M.
    Italia, M.
    La Magna, A.
    Fortunato, G.
    Priolo, F.
    Privitera, V.
    Carnera, A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (05)
  • [8] Te implantation in Ge(001) for n-type doping applications
    Toinin, J. Perrin
    Portavoce, A.
    Hoummada, K.
    Texier, M.
    Bertoglio, M.
    Bernardini, S.
    Chow, L.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 42 : 215 - 218
  • [9] Characterization of Hot N-type Plasma Doping (PLAD) Implantation
    Li, Haoyu
    Raj, Deven
    Hu, Y. Jeff
    McTeer, Allen
    Srivastava, Aseem
    Maynard, Helen
    [J]. 2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2017, : 54 - 57
  • [10] Co-implantation of Si+N into GaN for n-type doping
    Nakano, Y
    Jimbo, T
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) : 3815 - 3819
12345