N-type doping of Ge by As implantation and excimer laser annealing

被引：57

作者：

Milazzo, R. ^{[1
,2
]}

Napolitani, E. ^{[1
,2
]}

Impellizzeri, G. ^{[3
,4
]}

Fisicaro, G. ^{[5
]}

Boninelli, S. ^{[3
,4
]}

Cuscuna, M. ^{[6
]}

De Salvador, D. ^{[1
,2
]}

Mastromatteo, M. ^{[1
,2
]}

Italia, M. ^{[5
]}

La Magna, A. ^{[5
]}

Fortunato, G. ^{[6
]}

Priolo, F. ^{[3
,4
]}

Privitera, V. ^{[3
,4
]}

Carnera, A. ^{[1
,2
]}

机构：

[1] Univ Padua, CNR IMM MATIS, I-35131 Padua, Italy

[2] Univ Padua, Dipartimento Fis Astron, I-35131 Padua, Italy

[3] Univ Catania, CNR IMM MATIS, I-95123 Catania, Italy

[4] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[5] CNR IMM, I-95121 Catania, Italy

[6] CNR IMM, I-00133 Rome, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 05期

关键词：

ELECTRICAL ACTIVATION; SHALLOW JUNCTIONS; GERMANIUM;

D O I：

10.1063/1.4863779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusion and activation of arsenic implanted into germanium at 40 keV with maximum concentrations below and above the solid solubility (8 x 10(19) cm(-3)) have been studied, both experimentally and theoretically, after excimer laser annealing (lambda = 308 nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1 x 10(20) cm(-3), which represents a new record for the As-doped Ge system. (C) 2014 AIP Publishing LLC.

引用

页数：5

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