A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides

被引：76

作者：

Yang, N

Henson, WK

Wortman, JJ

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] IMEC, STDI, B-3001 Louvain, Belgium

[3] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 08期

基金：

美国国家科学基金会;

关键词：

band-to-band tunneling; gate-induced-drain-leakage current (GIDL); leakage current; modeling; MOS devices; power consumption; tunneling; ultrathin oxides;

D O I：

10.1109/16.853042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work examines different components of leakage current in scaled n-MOSFET's with ultrathin gate oxides (1.4-2.0 nm), Both gate direct tunneling and drain leakage currents are studied by theoretical modeling and experiments, and their effects on the drain current are investigated and compared. It concludes that the source and drain extension to the gate overlap regions have strong effects on device performance in terms of gate tunneling and off-state drain currents.

引用

页码：1636 / 1644

页数：9