A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides

被引：76

作者：

Yang, N

Henson, WK

Wortman, JJ

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] IMEC, STDI, B-3001 Louvain, Belgium

[3] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 08期

基金：

美国国家科学基金会;

关键词：

band-to-band tunneling; gate-induced-drain-leakage current (GIDL); leakage current; modeling; MOS devices; power consumption; tunneling; ultrathin oxides;

D O I：

10.1109/16.853042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work examines different components of leakage current in scaled n-MOSFET's with ultrathin gate oxides (1.4-2.0 nm), Both gate direct tunneling and drain leakage currents are studied by theoretical modeling and experiments, and their effects on the drain current are investigated and compared. It concludes that the source and drain extension to the gate overlap regions have strong effects on device performance in terms of gate tunneling and off-state drain currents.

引用

页码：1636 / 1644

页数：9

共 41 条

[21] Sub-100 nm Γ-gate MOSFET's with self-aligned drain extension formed by solid phase diffusion
To, KH
Woo, JCS
IEEE ELECTRON DEVICE LETTERS, 2000, 21 (02) : 79 - 81
[22] Erase/write cycle tests of n-MOSFET's with Si-implanted gate-SiO2
Ohzone, T
Matsuda, T
Hori, T
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1374 - 1381
[23] 2-D analytical modeling of drain and gate-leakage currents of cylindrical gate asymmetric halo doped dual material-junctionless accumulation mode MOSFET
Baral, Kamalaksha
Singh, Prince Kumar
Kumar, Sanjay
Singh, Ashish
Tripathy, Manas
Chander, Sweta
Jit, Satyabrata
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2020, 116
[24] Comparative study of p+/n+ gate modified saddle MOSFET and p+/n+ gate bulk FinFETs for sub-50 nm DRAM cell transistors
Park, Ki-Heung
Han, K. -R.
Kim, Y. M.
Choi, B. -K.
Lee, Jong-Ho
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 112 - 113
[25] Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-mu m n-MOSFET's
Trabzon, L
Awadelkarim, OO
Werking, J
Bersuker, G
Chan, YD
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (12) : 569 - 571
[26] New observation and improvement in GIDL current of N-MOSFET's with various kinds of gate oxides under hot-carrier stress
Lai, PT
Xu, JP
Zeng, X
Cheng, YC
ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 46 - 49
[27] Formation of amorphous Yb2O3/crystalline ZrTiO4 gate stack and its application in n-MOSFET with sub-nm EOT
Lin, Chia-Chun
Wu, Yung-Hsien
Wu, Chao-Yi
Lee, Ching-Wei
APPLIED SURFACE SCIENCE, 2014, 299 : 47 - 51
[28] Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's
Williams, SC
Kim, KW
Littlejohn, MA
Holton, WC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1760 - 1767
[29] A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's
Wang, TH
Chiang, LP
Zous, NK
Hsu, CF
Huang, LY
Chao, TS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (09) : 1877 - 1882
[30] The Effects of Direct Source-to-Drain Tunneling and Variation in the Body Thickness on (100) and (110) Sub-10-nm Si Double-Gate Transistors
Cho, Woo-Suhl
Roy, Kaushik
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (05) : 427 - 429

← 1 2 3 4 5 →