Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga, Mn)As

被引：150
|
作者：
Oiwa, A
Mitsumori, Y
Moriya, R
Slupinski, T
Munekata, H
机构：
[1] Kanagawa Acad Sci & Technol, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[2] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 13期
关键词：
D O I：
10.1103/PhysRevLett.88.137202
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on the new type of photoinduced magnetization in ferromagnetic (Ga,Mn) thin films. Optically generated spin-polarized holes change the orientation of ferromagnetically coupled Mn spins and cause a large change in magnetization, being 15% of the saturation magnetization, without the application of a magnetic field. The memorization effect has also been found as a trace after the photoinduced magnetization. The observed results suggest that a small amount of nonequilibrium carrier spins can cause collective rotation of Mn spins presumably through the p-d exchange interaction.
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页数：4
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