Staircase-like hysteresis loop in III-V compound diluted magnetic semiconductor (In,Mn)As at low temperatures

被引：2
|
作者：
Oiwa, A
Endo, A
Katsumoto, S
Iye, Y
Munekata, H
机构：
[1] Kanagawa Acad Sci & Technol, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[2] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 1068666, Japan
[3] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268503, Japan
来源：
PHYSICA B | 2000年 / 284卷
关键词：
diluted magnetic semiconductors; staircase-like hysteresis loop;
D O I：
10.1016/S0921-4526(99)02590-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have found a staircase-like hysteresis loop in III-V compound diluted magnetic semiconductor (In,Mn)As in magneto-transport behavior below 1 K. The observed stepwise changes are attributed to the corresponding jumps in magnetization and are associated with the depinning process of domain walls. We discuss thermal avalanche effect and quantum tunneling, (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1173 / 1174
页数：2
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