Silicon Nanowires Integrated in a Fully Depleted CMOS Process for Charge Based Biosensing

被引：0

作者：

Jayakumar, G. ^{[1
]}

Asadollahi, A. ^{[1
]}

Hellstrom, P-E ^{[1
]}

Garidis, K. ^{[1
]}

Ostling, M. ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch ICT, Kista, Sweden

来源：

2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) | 2013年

关键词：

nanowire; biosensing; SOI; CMOS; STL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a silicon nanowire (SiNW) biosensor fabricated in a fully depleted SOI CMOS process. The sensor array consists of 32 by 32 pixel matrix (1024 pixels or test sites) and 8 input-output (I/O) pins. In each pixel single crystalline SiNW with 60 by 20 nm cross-section area is defined using sidewall transfer lithography (STL) in the SOI layer. The key advantage of the design is that 1024 individual SiNWs can be read-out sequentially and used for real-time charge based detection of molecules in liquids or gases.

引用

页码：81 / 84

页数：4

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