Synthesis and compression of nanocrystalline silicon carbide

被引：6

作者：

Zhu, Hongyang ^{[1
,2
]}

Ma, Yanzhang ^{[1
]}

Yang, Haibin ^{[2
]}

Selvi, Emre ^{[1
]}

Hou, Dongbin ^{[1
]}

Ji, Cheng ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Mech Engn, Lubbock, TX 79409 USA

[2] Jilin Univ, Natl Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 12期

基金：

美国国家科学基金会;

关键词：

elastic moduli; lattice constants; nanostructured materials; nanotechnology; silicon compounds; wide band gap semiconductors; X-ray diffraction;

D O I：

10.1063/1.3043846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanocrystalline silicon carbide (SiC) with a diameter of 7 nm was synthesized in a high voltage electrical explosion. It has a larger lattice parameter (0.1%) than its bulk material. Synchrotron x-ray diffraction measurements of nanocrystalline SiC were carried out to 15.8 GPa. The bulk modulus was determined to be K-0T=201 +/- 10 GPa, which is substantially smaller than those of bulk material and nanocrystalline with large grain sizes. It is considered to be caused by the weaker atomic bonding strength and the imperfections of the nanocrystalline SiC.

引用

页数：4

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