A simple route to nanocrystalline silicon carbide

Nanocrystalline silicon carbide has been prepared via reacting magnesium silicide (Mg2Si) with carbon tetrachloride (CCl4) in an autoclave at 450-600degreesC. X-ray diffraction patterns of the products can be indexed as the cubic cell of SiC with the lattice constant, a = 4.352 Angstrom, in good agreement with a = 4.349 Angstrom (JCPDS card No. 75-0254). The transmission electron microscopy images show that the sample mainly consists of nanoparticles with an average size from 30 to 80 nm co-existing with a small fraction of nanorods and nanowires. Typically the nanorods range from 20 to 40 nm in diameter and the nanowires have diameters of 20 mn and lengths up to 10 mun. The Raman spectrum shows a characteristic sharp peak at 790 cm(-1). X-ray photoelectron spectra (XPS) gives an atomic ratio of Si to C as 1.08:1.00 from the quantification of the peak intensities. Photoluminescence spectrum reveals that the SiC sample emits ultraviolet light of 328 nm. A possible mechanism and the influence of temperature on the formation of crystalline SiC are proposed. (C) 2004 Elsevier Inc. All rights reserved.