Influence of nitrogen on thermal warpage in Czochralski silicon wafers

被引：0
|
作者：
Lu, HM [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat Sci, Hangzhou 310027, Peoples R China
来源：
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA | 1999年 / 9卷 / 02期
关键词：
nitrogen; thermal warpage; mechanical strength; silicon wafers;
D O I：
暂无
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
The effect of nitrogen on thermal warpage in nitrogen-doped Czochralski (CZ) silicon wafers after heat treatment was studied. After preannealing at 1000 degrees C for 6 h, the warpage of the silicon wafers was suppressed during subsequent thermal warping test due to the formation of nitrogen-oxygen clusters with smaller size. After preannealing at 1000 degrees C for 16 h, the silicon wafers show a large increase during thermal warping test due to the large amount of oxygen precipitation. The results indicate that the nitrogen is very effective to increasing the mechanical strength of silicon wafers of CZ silicon at high temperature.
引用
收藏
页码：352 / 354
页数：3
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