Functional resist materials for negative tone development in advanced lithography

被引：10
|
作者：
Tarutani, Shinji [1 ]
Fujii, Kana [1 ]
Yamamoto, Kei [1 ]
Iwato, Kaoru [1 ]
Shirakawa, Michihiro [1 ]
机构：
[1] FUJIFILM Corp, Elect Mat Res Labs, R&D Management Headquarters, Yoshida, Shizuoka 4210396, Japan
来源：
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIX | 2012年 / 8325卷
关键词：
Negative tone development process; lithography performance; dry etch resistance; substrate compatibility;
D O I：
10.1117/12.916281
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Challenges of lithography performance, dry etch resistance, and substrate dependency in resist materials dedicated to negative tone development (NTD) process were studied. The gamma-parameter in contrast curve was increased to achieve improvement in lithography performances, and CD-uniformity (CDU), DOF, and circularity of dense C/H pattern were studied for the resist material. Ohnishi-parameter of de-protected polymer was decreased to improve dry etch resistance, and dissolution property and lithography performance were studied to look at maturity of materials. Formulation dependency on pattern collapse property on spin-on-type Si-hard mask (Si-HM) were studied, and material property to suppress pattern collapse was discussed.
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页数：8
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