Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices

被引：0
|
作者：
Wang, JN [1 ]
Li, CY [1 ]
Wang, XR [1 ]
Sun, BQ [1 ]
Wang, YQ [1 ]
Ge, WK [1 ]
Jiang, DS [1 ]
Zeng, YP [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We observed the transverse magnetic field induced transition from static to dynamic electric field domain formation in doped GaAs/AlAs superlattices. A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage characteristics in the transition process. Within each dynamic dc voltage band at a fixed magnetic field the current self-oscillation frequency was increased while the average current was decreased. These results were explained by a general analysis of stability of the sequential tunneling current in superlattices.
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页码：837 / 838
页数：2
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