Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices

被引：1
|
作者：
Pavelyev, D. G. [1 ]
Vasilev, A. P. [2 ]
Kozlov, V. A. [1 ,3 ]
Obolenskaya, E. S. [1 ]
机构：
[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
[2] Russian Acad Sci, Res & Engn Ctr, Submicron Heterostruct Microelect, St Petersburg 194021, Russia
[3] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603087, Russia
来源：
SEMICONDUCTORS | 2018年 / 52卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
SEMICONDUCTOR STRUCTURES; NEUTRON-IRRADIATION; ELECTRON-TRANSPORT; THZ DIODES; SIMULATION; GAAS; GAN;
D O I：
10.1134/S1063782618110192
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The radiation resistance to the gamma-neutron irradiation (similar to 1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current-voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.
引用
收藏
页码：1448 / 1456
页数：9
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